(liu ^s.mi-dondu.cto'l lprodueta, one.. tx u 20 stern ave. springfield, new jersey 07081 u.s.a. plastic medium-power coplementary silicon transistors ...designed for general-purpose amplifier and low speed switching applications features: * collector-emitter sustaining vortage- vTIP122.tip127 * collector-emitter saturation voltage vchw = 2- v (max > c lc ? 3- a * monolithic construction with built-in base-emitter shunt resistor maximum ratings telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn pnp tip120 tip125 tip121 tip126 TIP122 tip127 characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation ?tc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo >c >cm ib pd tj .tsto tip120 tip126 60 60 tip121 tip126 60 80 TIP122 tip127 100 100 5.0 5.0 8.0 120 65 0.52 -65to+150 unit v v v a ma w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.92 unit c/w figure -1 power derating *. 10 25 50 75 100 125 tc , temperature< c) 150 5.0 ampere darlington complementary silicon power transistors 60-100 volts 65 watts to-220 pin lease 2.coilector 4.cou_ector(case) dim a b c d e f g h i j k l m 0 millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 422 1.14 2.20 0.33 2.48 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.96 1.38 2.97 0.55 2.96 3.90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tip120.tip121.TIP122npn / tip125, tip126, tip127 pnp electrical characteristics ( tc = 25"c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) (lc = 30majb = 0) tip120.tip125 tip121.tip126 TIP122.tip127 collector cutoff current (vci = 30v, , = 0 ) tip120.tip125 (vei = 40v, , = 0 ) tip121.tip126 (vci = 50v, , = 0 ) TIP122.tip127 collector cutoff current (vei = 60v, s = 0 ) tip120.tip125 (vcb = 80v, e = 0 ) tip121.tip126 ( vcb = 100 v,ls - 0 ) TIP122.tip127 emitter cutoff current (veb = 5.0v,ic=0 ) w vceo(suc) 'ceo icbo '??0 60 80 100 0.5 0.5 0.5 0.2 0.2 0.2 2.0 v ma ma ma on characteristics (1) dc current gain (ic = 0.5a,vce = 3.0v) (ic = 3.0a,vce = 3.0v) collector-emitter saturation voltage (ic = 3.0a ib = 12ma) (lc = s.oa,lb = 20ma) base-emitter on voltage (ic = 3.0a,vce = 3.0v) hfe vce(iart) vbe,on, 1000 1000 2.0 4.0 2.5 v v dynamic characteristics small-signal current gain (lc = 3.0a,vce = 4.0v,f =1.0 mhz) output capacitance (vcb = 10 v, i- ? 0 , f = 0.1 mhz ) tip120,tip121,TIP122 tip125,tip126,tip127 h* cob 4.0 300 250 pf (1) pulse test: pulse width = 300 us , duty cycle 2.0% internal schematic diagram npn tip120 tip121 b- TIP122 ?-:?ivt- pnp tip125 r tip126 tip127
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